? 2008 ixys corporation, all rights reserved ds100031(08/08) symbol test conditions maximum ratings v dss t j = 25c to 150c 250 v v dgr t j = 25 c to 15 0 c, r gs = 1m 25 0 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 110 a i lrms lead current limit, rms 75 a i dm t c = 25c, pulse width limited by t jm 300 a i a t c = 25c 25 a e as t c = 25c 1 j dv/dt i s i dm , v dd v dss , t j 150c 10 v/ns p d t c = 25c 694 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c f c mounting force 11..65 / 2.5..14.6 n/lb. weight 4 g symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 3ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 10 a v gs = 0v t j = 125c 1 m a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 24 m trench gate power hiperfet n-channel enhancement mode avalanche rated IXFV110N25T IXFV110N25Ts v dss = 250v i d25 = 110a r ds(on) 24m features z international standard packages z avalanche rated advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies preliminary technical information g = gate d = drain s = source tab = drain plus220smd (ixfv_s) g s d (tab) g s d plus220 (ixfv) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFV110N25T IXFV110N25Ts symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 65 110 s c iss 9400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 850 pf c rss 55 pf t d(on) 19 ns t r 27 ns t d(off) 60 ns t f 27 ns q g(on) 157 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 40 nc q gd 50 nc r thjc 0.18 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values t j = 25c unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = 55a, v gs = 0v, note 1 1.2 v t rr 170 ns q rm 946 nc i rm 17 a notes: 1. pulse test, t 300 m s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) i f = 55a, -di/dt = 25 0 a/ s v r = 1 00 v, v gs = 0 v plus220smd (ixfv_s) outline plus220 (ixfv) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v 5.5v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 110 0123456 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 110a i d = 55a fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 20 40 60 80 100 120 140 160 180 200 220 240 260 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit IXFV110N25T IXFV110N25Ts
ixys reserves the right to change limits, test conditions, and dimensions. IXFV110N25T IXFV110N25Ts fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 125v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.00 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: t_110n25t(8w)08-11-08-a fig. 14. resistive turn-on rise time vs. drain current 20 21 22 23 24 25 26 27 28 29 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t r - nanoseconds r g = 2 v gs = 15v v ds = 125v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 25 30 35 40 45 50 2345678910 r g - ohms t r - nanoseconds 19 20 21 22 23 24 25 26 27 28 29 30 31 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 110a, 55a fig. 16. resistive turn-off switching times vs. junction temperature 14 16 18 20 22 24 26 28 30 32 34 36 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 52 54 56 58 60 62 64 66 68 70 72 74 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 , v gs = 15v v ds = 125v i d = 55a i d = 110a fig. 17. resistive turn-off switching times vs. drain current 21 22 23 24 25 26 27 28 29 30 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t f - nanoseconds 45 50 55 60 65 70 75 80 85 90 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 2 , v gs = 15v v ds = 125v t j = 25oc t j = 125oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 21 22 23 24 25 26 27 28 29 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 v gs = 15v v ds = 125v i d = 110a i d = 55a fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 2345678910 r g - ohms t f - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 55a, 110a IXFV110N25T IXFV110N25Ts
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